Generation and enhancement of surface acoustic waves on highly doped P-Type GaAs substrates | The George Washington University

Generation and enhancement of surface acoustic waves on highly doped P-Type GaAs substrates

Case ID: 020-002-Zaghloul

Researchers at GW have developed a novel method to enhance the piezoelectric property of weak or none piezoelectric materials(GaAs) using surface acoustic waves and strong piezoelectric material (ZnO). This will help in generating piezoelectric effect on materials that can be used in electronic applications and optoelectronic devices.

This disclosed invention can be implemented as a device/method. The method is made up of SAW(Surface acoustic wave) device implemented in an island format which has been successfully tested in the lab on a highly doped P-Type GaAs substrate which has enhanced the piezoelectric properties of the substrate. 

Advantages

  • Can be used on highly doped semiconductor materials

Applications

  • Photodetectors, photomultipliers
  • Electron microscope
  • Nanowires/nanotube applications
  • SAW- Tunable crystal phase superlattices
  • Advanced memory devices
  • High brightness unpolarized electron sources for high energy physics

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Patent Information:

Title App Type Country Patent No. File Date Issued Date Patent Status
Generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate US Utility *United States of America 11,211,913 7/15/2020 12/28/2021 Issued

For Information, Contact:

Michael Harpen
Licensing Manager
George Washington University
mharpen@gwu.edu

Inventors:

Boqun Dong
Mona Zaghloul
Keywords: